Strain-dependent transport properties of the ultra-thin correlated metal, LaNiO3
نویسندگان
چکیده
We explore the electrical transport and magneto-conductance (MC) in quasi-two-dimensional strongly correlated ultra-thin films of LaNiO3 (LNO) to investigate the effect of hetero-epitaxial strain on electron–electron and electron–lattice interactions from the low to intermediate temperature range (2–170K). The fully epitaxial 10 unit cell thick films spanning tensile strain up to ∼4% are used to investigate the effects of enhanced carrier localization driven by a combination of weak localization (WL) and electron–electron interactions at low temperatures. The MC data show the importance of the increased contribution of WL to low-temperature quantum corrections. The obtained results demonstrate that with increasing tensile strain and reduced temperature, the quantum-confined LNO system gradually evolves from theMott into the Mott–Anderson regime. 5 Author to whom any correspondence should be addressed. New Journal of Physics 13 (2011) 073037 1367-2630/11/073037+08$33.00 © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft
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